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| inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 2SK2299 description drain current i d = 7a@ t c =25 drain source voltage- : v dss = 450v(min) fast switching speed applications switching regulators absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 450 v v gs gate-source voltage 30 v i d drain current-continuous@ tc=25 7 a i d(puls) pulsed drain current 28 a p tot total dissipation@tc=25 30 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 2SK2299 electrical characteristics (t c =25 ) symbol parameter conditions min typ e max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 10ma 450 v v gs (th ) gate threshold voltage v ds = 10v; i d =1ma 2.0 4.0 v r ds( on ) drain-source on-resistance v gs = 10v; i d = 4a 0.85 1.1 i gss gate-body leakage current v gs = 30v;v ds = 0 100 na i dss zero gate voltage drain current v ds = 450v; v gs = 0 100 a c iss input capacitance v ds =10v; v gs =0v; f t =1mhz 870 pf c rss reverse transfer capacitance 40 c oss output capacitance 180 t r rise time v gs =10v; r gs =10 i d =4a; v dd =150v; r l =37.5 18 ns t d(on) turn-on delay time 15 t f fall time 35 t d(off) turn-off delay time 60 pdf pdffactory pro www.fineprint.cn |
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